Aluminum Nitride – AlN, is most often the material of choice due to its relatively excellent thermal conductivity and non-toxic nature.
AlN is somewhat more challenging than some other technical ceramic because the fine grained grinding powder adheres to the diamond tooling requiring frequent wheel dressing to allow for efficient stock removal without excessive preassure and localized heating. Otherwise, Aluminium nitride machines like other technical ceramics. ALN can be drilled, threaded, and ground with the same basic technics and processes as aluminium oxide. San Jose has extensive experience fabricating aluminum nitride parts so contact us today; we will be pleased to assist you.
Because San Jose Delta has a segregated beryllium oxide – BeO department with over 20 years of experience fabricating common microwave designs such as helix support rods, termination wedges, heatsinks, etc.,we apply the same basic manufacturing processes to produce these designs using aluminum nitride.
Aluminum Nitride (AlN) Material Properties Data
“PAD” Aluminum Nitride
“PAD” (Pressure Assisted Densiflcation) AIN is processed to be fully dense and is characterized as having good thermal conductivity and dielectric properties. AIN is non-toxic and makes an attractive alternate for applications where BeO is used/considered. Additionally, AIN is resistant to molten aluminum, gallium, iron, nickel, molybdenum, silicon and boron. AlN can be metalized, plated and brazed.
“PAD” Aluminum Nitride – Properties (Typical)
| Property | Value |
|---|---|
| Bulk Desity | 3.27 g/cm3 |
| Average Grain Size | 5.0 µm |
| Flexural Strength (MOR) @RT, 4 point average | 338 MPa 52 ksi |
| Characteristic Strength @RT, 4 point | 373 MPa 54 ksi |
| Weibull Modulus (m) | 16 |
| Elastic Modulus (E) | 330 GPa 47 Mpsi |
| Poisson's Ratio (v) | 0.25 |
| Hardness (Knoop 1 kg) | 1100 kg/mm3 |
| Fracture Toughness (Vickers) | 2.5 MPa*m1/2 |
| Thermal Expansion (RT-1000℃) | 5.0 x 10-6/℃ |
| Thermal Conductivity (RT) | 170-200 W/m*K |
| Thermal Shock Resistance (▵Tc) | 675 ℃ |
| Dielectric Constant 1kHz 1 MHz | 9.0 9.0 |
| Electrical Resistivity (ohm-cm) | 1014 |
| Dielectric Loss (RT - 1MHz) | 0.0001-0.001 |
*Properties vary depended upon green forming technique